The CIGS solar cells have drew much attention recently because of its specific advantages such as high efficiency, good performance under low illumination, resistance to radiation and flexible bandgap. The CIGS absorber layer can be fabricated by coevaporation, sputtering, electrical deposition and many other methods and sputtering is considered to be the most suitable way for large scale fabrication. In this paper CIS thin films were deposited on both SLG and Mo coated SLG substrates by sputtering one ternary target followed by post annealing. CIS thin film with good crystallinity under optimal process parameters was obtained. The effects of different substrate temperatures in deposition process and annealing temperature on the crystallization of the thin films were investigated. We found that the crystallinity of the CIS thin film deposited at 150℃ was improved after post annealing while the annealing temperature had slight effect on the crystallization of CIS thin film on Mo coated SLG substrate. The result also shows that density of the target has significant influence while sputtering ternary target.
WU Zhao
,
HONG Ruijiang
. Fabrication of CIS thin film by sputtering one ternary target[J]. Science & Technology Review, 2016
, 34(2)
: 43
-45
.
DOI: 10.3981/j.issn.1000-7857.2016.2.005
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